IKW75N60T – High Speed Switching IGBT
IKW75N60T – High Speed Switching IGBT High-speed 5 IGBT in TRENCHSTOP TM 5 Technology copacked with RAPID 1fast and soft anti-parallel diode.
Application:
- Generalpurposeinverters
- Uninterruptible power supplies
- Motor drives
- Mediumtolowswitchingfrequencypowerconverters
Features/Specs:
- Model No: IKW75N60T
- Collector-emitter voltage Tj ≥ 25°C: 600V
- DC collector current: 75~80A
- Pulsed collector current: 225A
- Turn off safe operating area VCE = 600V, Tj = 175°C, tp = 1µs: 225A
- Diode forward current: 75~80A
- Diode pulsed current: 225A
- Gate-emitter voltage: +-20V
- Short circuit withstand time: 5us
- Very low VCE: 1.5V
- Maximum Junction Temperature: 175°C
- Short circuit withstand time: 5ns
- Positive temperature coefficient in VCE(sat)
- Very tight parameter distribution
- High ruggedness, temperature stable behaviour
- Very high switching speed
- Low EMI
- Very soft, fast recovery anti-parallel Emitter Controlled HE diode
- Qualified according to JEDEC1) for target applications
- Pb-free lead plating; RoHS compliant
- Complete product spectrum and PSpice Models
- Package: PG-TO247-3
Package Includes:
- 1 x IKW75N60T – High-Speed Switching IGBT
Datasheet: IKW75N60T
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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