FGA25S125P 1250V 25A Shorted-Anode IGBT – TO-3PN Package
Using advanced field stop trench and shorted-anode technology, ON Semiconductor’s shorted-anode trench IGBTs offer superior con-duction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven. This product is known as FGA25S125, 25S125P, 25S125, FGA25S125P IGBT, Fairchild FGA25S125P IGBT, 512-FGA25S125P.
Features:
- High Speed Switching
- Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 25 A
- High Input Impedance
Features/Specs:
- Manufacturer: onsemi / Fairchild
- Manufacturer Part No: FGA25S125P
- Product Type: IGBT Transistor
- Configuration: Single
- Collector- Emitter Voltage VCEO Max: 1250 V
- Collector-Emitter Saturation Voltage: 2.16 V
- Maximum Gate Emitter Voltage: 25 V
- Continuous Collector Current @ 25°C: 50 A
- Pd – Power Dissipation: 250 Watt
- Minimum Operating Temperature: -55°C
- Maximum Operating Temperature: +175°C
- Mounting Style: Through Hole
- Package/Case: TO-3PN
Application:
- Induction Heating
- Microwave Oven etc.
Datasheet: FGA25S125P
Package Includes:
- 1 x FGA25S125P 1250V 25A Shorted-Anode IGBT – TO-3PN Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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