FDN339AN 20V 3A N-Channel Mosfet – SOT-23 Package

FDN339AN 20V 3A N-Channel Mosfet – SOT-23 Package

This N−Channel logic level enhancement mode field effect transistor is produced using on semi’s proprietary, high cell density, DMOS technology. This very high-density process is specially tailored to minimize on−state resistance. This device has been designed especially for low-voltage applications to replace digital transistors. Since bias resistors are not required, this one N−channel FET can replace several different digital transistors, with different bias resistor values.

Features/Specs:

• Part No: FDN339AN
• Manufacturer: Fairchild Semiconductor / ONSEMI
• FET Type: N-Channel
• Drain−Source Voltage: 20V
• Gate−Source Voltage: ±8V
• Drain/Output Current:3A
• Power Dissipation: 0.500W
• Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V
• Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 4.5V
• Operating Temperature Range: -55 ~ +150°C
• Mounting Type: Surface Mount
• Package/Case: SOT-23-3

Datasheet: FDN339AN

Package Includes:

• 1 x FDN339AN 20V 3A N-Channel Mosfet – SOT-23 Package