FDN301N 25V 0.22A N-Channel Mosfet – SOT-23 Package
This N−Channel logic level enhancement mode field effect transistor is produced using on semi’s proprietary, high cell density, DMOS technology. This very high-density process is specially tailored to minimize on−state resistance. This device has been designed especially for low-voltage applications to replace digital transistors. Since bias resistors are not required, this one N−channel FET can replace several different digital transistors, with different bias resistor values.
Features:
- 25 V, 0.22 A Continuous, 0.5 A Peak
- RDS(on) = 5 @ VGS = 2.7 V
- RDS(on) = 4 @ VGS = 4.5 V
- Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.06 V
- Gate−Source Zener for ESD Ruggedness. > 6 kV Human Body Model
- Replace Multiple NPN Digital Transistors with One DMOS FET
- This Device is Pb−Free and Halide Free
Features/Specs:
- Part No: FDN301N
- Manufacturer: Fairchild Semiconductor / ONSEMI
- FET Type: N-Channel
- Drain−Source Voltage, Power Supply Voltage: 25V
- Gate−Source Voltage: 8V
- Drain/Output Current − Continuous: 0.22A
- Power Dissipation: 0.35W
- Zero Input Voltage Output Current: 1uA
- Output to Ground Resistance: 5Ω
- Operating Temperature Range: -55 ~ +150°C
- Mounting Type: Surface Mount
- Package/Case: SOT-23-3
Datasheet: FDN301N 25V 0.22A N-Channel Mosfet – SOT-23 Package
Package Includes:
- 1 x FDN301N 25V 0.22A N-Channel Mosfet – SOT-23 Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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