DMN13H750S-7 – 130V 1A N-Channel Enhancement Mode Mosfet – SOT-23 Package
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Tags, 621-DMN13H750S-7, DMN13H750S-7, MOSFET N-CH 130V 1A SOT23, DMN13H750S-7DITR-ND, DMN13H750S-7DIDKR-ND.
Features/Specs:
- Manufacturer Part No: DMN13H750S-7
- Manufacturer: Diodes Incorporated
- Product Category: MOSFET
- Transistor Polarity: N-Channel
- Number of Channels: 1 Channel
- Drain-Source Breakdown Voltage: 130V
- Continuous Drain Current: 1A
- Drain-Source Resistance: 750 mOhms
- Gate-Source Voltage: -20V ~ +20V
- Gate-Source Threshold Voltage: 2V
- Gate Charge: 5.6 nC
- Power Dissipation: 1.26W
- Channel Mode: Enhancement
- Configuration: Single
- Fall Time: 1.7ns
- Rise Time: 1.7ns
- Transistor Type: 1 N-Channel
- Typical Turn-Off Delay Time: 6.6ns
- Typical Turn-On Delay Time: 2.3ns
- Operating Temperature: -55°C ~ +150°C
- Mounting Style: SMD/SMT
- Package/Case: SOT-23-3
Application:
- DC-DC Converters
- Power Management Functions
- Battery Operated Systems and Solid-State Relays
- Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
Datasheet: DMN13H750S-7 – 130V 1A N-Channel Enhancement Mode Mosfet – SOT-23 Package
Package Includes:
- 1 x DMN13H750S-7 – 130V 1A N-Channel Enhancement Mode Mosfet – SOT-23 Package
Note: Product images are shown for illustrative purposes only and may differ from the actual product.
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