BUZ90 N-Channel Mosfet Power Transistor – TO-220 Package
BUZ90 N-Channel Mosfet Power Transistor 600V 4.5A TO-220 Package. BUZ90 is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. This Product is known as BUZ90, BUZ90 Mosfet, BUZ90 Mosfet Power Transistor, BUZ90 Transistor, BUZ90 MOSFET, BUZ90 Mosfet Power Transistor, BUZ90 Power Transistor, Transistor.
Features/Specs:
- Drain- source breakdown voltage: 600V
- Gate threshold voltage: 2.1 ~ 4V
- Zero gate voltage drain current: 10 ~ 100uA
- Gate-source leakage current: 10 ~ 10nA
- Drain-Source on-resistance: 1.5 ~ 16 OHM
- Continuous drain current: 4.5A
- Pulsed drain current: 18A
- Gate source voltage: ±20V
- Power dissipation: 75 Watts
- Input capacitance: 780 ~ 1050 pF
- Turn-on delay time: 20 ~ 30ns
- Rise time: 50 ~ 75 ns
- Operating temperature: -55 ~ +150°C
- Thermal Resistance: ≤ 1.67 K/W
- Package: TO-220 AB
Application:
- Automotive Power Actuator Drivers
- Motor Controls
- DC-DC Converters
Datasheet: BUZ90
Package Includes:
- 1 x BUZ90 N-Channel Mosfet Power Transistor – TO-220 Package
Note: Product Images are shown for illustrative purposes only and may differ from actual product
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