BS170-N-Channel MOSFET
Small Signal MOSFET 500 mA, 60 Volts N-Channel BS170 is a new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversions in switching mode operation for system miniaturization and higher efficiency.
Features/Specs:
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage: 60V
- Continuous Drain Current: 500mA
- Drain-Source Resistance: 5Ohms
- Gate-Source Voltage: 20V
- Configuration: Single
- Operating Temperature Range: -55 – 150°C
- Power Dissipation: 350mW
- Low offset voltage
- Full-voltage operation
- Easily driven without buffer
- Low error voltage
- No high-temperature run-away
- Excellent thermal stability
Package Includes:
- 1 x BS170-N-Channel MOSFET
Datasheet: BS170
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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