BDX33C NPN Complementary Silicon Power Darlington Transistor – TO-220 Package
The 10 A, 100 V PNP Darlington Bipolar Power Transistor is designed for general purpose and low-speed switching applications. The BDX33B, BDX33C, BDX34B, and BDX34C are complementary devices. BDX33C is a three-layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE. Intended for use in power linear and switching applications.
Features/Specs:
- Make: ST Microelectronics
- Part No: BDX33C
- Low saturation voltage
- NPN, Silicon
- Max Collector Continuous Current: 10 A
- Max Collector-Emitter Voltage: 100 V
- Max Collector-Base Voltage: 100 V
- Max Emitter-Base Voltage: 2.5 V
- Operating Temperature Range: -65 – 150°C
- Power Dissipation (Pd): 70W
- Mounting Type: Through Hole
- Package / Case: TO-220
Application:
- General Purpose Amplifier
- Low Speed Switching
Datasheet: BDX33c Transistor
Package Includes:
- 1 x BDX33C NPN Complementary Silicon Power Darlington Transistor – TO-220 Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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