BD676 Medium−Power Silicon PNP Darlington Transistor – TO-225-3 Package
BD676 Medium−Power Silicon PNP Darlington Transistors, Designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. This Product is known as BD676, BD676 Medium−Power Silicon PNP Darlington Transistor, BD676 transistor, BD676 Power Transistor, BD676 Medium Power Transistor, BD676 PNP Transistor.
Features/Specs:
- Product Type: Darlington Transistor
- Configuration: Single
- Transistor Polarity: PNP
- Collector- Emitter Voltage VCEO Max: 45 V
- Emitter- Base Voltage VEBO: 5 V
- Collector- Base Voltage VCBO: 45 V
- Maximum DC Collector Current: 4 A
- Maximum Collector Cut-off Current: 200 uA
- Power Dissipation: 40 W
- Continuous Collector Current: 4 A
- DC Collector/Base Gain hFE Min: 750
- Minimum Operating Temperature: -55°C
- Maximum Operating Temperature: +150°C
- Mounting Style: Through Hole
- Package/Case: TO-225-3
Datasheet: BD676
Package Includes:
- 1 x BD676 Medium−Power Silicon PNP Darlington Transistor – TO-225-3 Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product
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