BD242C PNP Silicon Power Transistor – TO-220 Package
Power Transistors, designed for Complementary Use with the BD241 Series. BD242C is a three layer PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. This Product is known as BD242, BD242 Bipolar Power Transistor, BD242 PNP Bipolar Power Transistor, BD242 PNP Transistor, BD242 Power Transistor, BD242 Transistor, Bipolar Power Transistor, Component, PNP Bipolar Power Transistor, Power Transistor, Transistor.
Features/Specs:
- Product Type: BJTs – Bipolar Transistors
- Transistor Polarity: PNP
- Collector- Emitter Voltage VCEO Max: 45 V
- Emitter- Base Voltage VEBO: 5 V
- Maximum DC Collector Current: 3 A
- Pd – Power Dissipation: 40 W
- Minimum Operating Temperature: -65°C
- Maximum Operating Temperature: +150°C
- DC Collector/Base Gain hFE Min: 25
- Mounting Style: Through Hole
- Package/Case: TO-220-3
Application:
- Power Linear And Switching
- General Purpose Amplifiers
Package Includes:
- 1 x BD242C PNP Silicon Power Transistor – TO-220 Package
Note: Product Images are shown for illustrative purposes only and may differ from actual product
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