BD241C NPN Silicon Power Transistor – TO-220 Package
Power Transistors, designed for Complementary Use with the BD242 Series. BD241C is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. This Product is known as BD241, BD241 Bipolar Power Transistor, BD241 NPN Bipolar Power Transistor, BD241 NPN Transistor, BD241 Power Transistor, BD241 Transistor, BD241C, BD241CPower Transistor, Bipolar Power Transistor, Component, NPN Bipolar Power Transistor, Power Transistor, Transistor.
Features/Specs:
- Product Type: BJTs – Bipolar Transistors
- Transistor Polarity: NPN
- Configuration: Single
- Collector- Emitter Voltage VCEO Max: 45 V
- Emitter- Base Voltage VEBO: 5 V
- Maximum DC Collector Current: 3 A
- Pd – Power Dissipation: 40 W
- Operating Temperature Range: -65°C ~ +150°C
- DC Collector/Base Gain hFE Min: 25
- Mounting Style: Through Hole
- Package/Case: TO-220-3
Applications:
- General Purpose
- Medium Power Linear
- Switching Applications
Datasheet: BD241 Power
Package Includes:
- 1 x BD241C NPN Silicon Power Transistor – TO-220 Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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