BD239 NPN Silicon Power Transistor – TO-220 Package
BD239 is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.
Features/Specs:
- Product Type: BJTs – Bipolar Transistors
- Transistor Polarity: NPN
- Configuration: Single
- Collector- Emitter Voltage VCEO Max: 45 V
- Emitter- Base Voltage VEBO: 5 V
- Maximum DC Collector Current: 2 A
- Pd – Power Dissipation: 30 W
- DC Collector/Base Gain hFE Min: 40
- Operating Temperature Range: -65°C ~ +150°C
- Mounting Style: Through Hole
- Package/Case: TO-220-3
Applications:
- Medium Power Linear
- Switching Applications
- General Purpose
Datasheet:Â Â
Package includes:
- 1 x BD239 NPN Silicon Power Transistor – TO-220 Package
Note: Product Images are shown for illustrative purposes only and may differ from actual product.
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