4N35 Optocoupler Phototransistor IC – DIP-6 Package
4N35 Optocoupler Phototransistor IC Package DIP-6 The 4N35 IC-Optocoupler Phototransistor IC consists of gallium arsenide infrared LED and a silicon NPN phototransistor. The couplers are Underwriters Laboratories (UL) listed to comply with a 5300 VRMS isolation test voltage. This isolation performance is accomplished through the double molding isolation manufacturing process. Compliance to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending partial discharge isolation specification is available for these families by ordering option 1. These isolation processes and the ISO9001 quality program results in the highest isolation performance available for a commercial plastic phototransistor optocoupler. The devices are available in a lead-formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers.
Features/Specs:
- Manufacturer: onsemi
- Part No: 4N35
- Make: Onsemi
- Reverse voltage: 6V
- Forward current: 60 mA
- Surge current: 2.5 A
- Power dissipation: 100 mW
- Collector-emitter breakdown voltage: 70 V
- Emitter-base breakdown voltage: 7V
- Collector current: 100 mA
- Isolation test voltage 5000 VRMS
- Interfaces with common logic families
- Input-output coupling capacitance < 0.5 pF
- Industry-standard dual-in-line 6 pin package
- Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
- Mounting Type: Through Hole
- Package / Case: 6-DIP
Applications:
- AC mains detection
- Reed relay driving
- Switch-mode power supply feedback
- Telephone ring detection
- Logic ground isolation
- Logic coupling with high-frequency noise rejection Â
Package Includes:
- 1 x 4N35 Optocoupler Phototransistor IC – DIP-6 Package
 Datasheet: 4N35
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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