4N28 Optocoupler Phototransistor IC – DIP-6 Package

4N28 Optocoupler Phototransistor IC – DIP-6 Package

4N28 Optocoupler Phototransistor IC Package DIP-6 The 4N28 IC-Optocoupler Phototransistor IC consists of gallium arsenide infrared LED and a silicon NPN phototransistor. The couplers are Underwriters Laboratories (UL) listed to comply with a 5300 VRMS isolation test voltage. This isolation performance is accomplished through the double molding isolation manufacturing process. Compliance to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending partial discharge isolation specification is available for these families by ordering option 1. These isolation processes and the ISO9001 quality program results in the highest isolation performance available for a commercial plastic phototransistor optocoupler. The devices are available in a lead-formed configuration suitable for surface mounting and are available either on tape and reel or in standard tube shipping containers.

Features/Specs:

• Part No: 4N28
• Manufacturer: Onsemi
• Voltage – Isolation: 5000Vrms
• Current Transfer Ratio (Min): 10% @ 10mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Output Type: Transistor with Base
• Voltage – Output (Max): 80V
• Voltage – Forward (Vf) (Typ): 1.2V
• Current – DC Forward (If) (Max): 60 mA
• Vce Saturation (Max): 500mV
• Operating Temperature: -55°C ~ 110°C
• Mounting Type: Through Hole
• Package / Case: 6-DIP

Applications:

• AC mains detection
• Reed relay driving
• Switch-mode power supply feedback
• Telephone ring detection
• Logic ground isolation
• Logic coupling with high-frequency noise rejection  

 Datasheet: 4N28

Package Includes:

• 1 x 4N28 Optocoupler Phototransistor IC – DIP-6 Package

Note: Product Images are shown for illustrative purposes only and may differ from the actual product.