These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary , planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and communication mode.
- 38.4A, 300V. Rds(on)=85mohm (Max) @ Vgs = 10V, Id=19.2A
- Low Gate Charge (Typ 90nC)
- Low Crss (70 pF)
- 100% Avalanche Tested
- RoHS compliant
Note: Product Images are shown for illustrative purposes only and may differ from actual product