2N5416 PNP High Voltage Transistor 300V 1A – TO-39 Package
2N5416 PNP High Voltage Transistor 300V 1A TO-39 Metal Package. The 2N5416 is a high voltage silicon epitaxial planar PNP transistor in the Jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching regulators.
Features/Specs:
- Product Type: BJTs – Bipolar Transistor
- Transistor Polarity: PNP
- Configuration: Single
- Collector- Emitter Voltage VCEO Max: 300 V
- Collector- Base Voltage VCBO: 350 V
- Emitter- Base Voltage VEBO: 6 V
- Collector-Emitter Saturation Voltage: 2.5 V
- Maximum DC Collector Current: 1 A
- Pd – Power Dissipation: 1 W
- Continuous Collector Current: 1 A
- DC Collector/Base Gain hFE Min: 15
- DC Current Gain hFE Max: 120
- Operating Temperature Range: -65°C ~ +200°C
- Mounting Style: Through Hole
- Package/Case: TO-39 Metal Package
Applications:
- Industrial
- Commercial
- Aerospace, Defence, Military etc
Datasheet: 2N5416
Package includes:
- 1 x 2N5416 PNP High Voltage Transistor 300V 1A – TO-39 Package
Note: Product Images are shown for illustrative purposes only and may differ from actual product.
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