2N3055 NPN Power Transistor – TO-3 Metal Package
2N3055 is a general purpose NPN power transistor manufactured with the epitaxial base process, mounted in a hermetically sealed metal case. The device is designed for general-purpose switching and amplifier applications. This Product is known as 2N3055 NPN Bipola Transistor, 2N3055 NPN Power Transistor, 2N3055 Power Transistor, 2N3055R Power Transistor,2N3055 NPN Bipolar Power Transistor,2N3055 NPN Transistor, 2N3055 Power Transistor, 2N3055 Transistor.
Features/Specs:
- Manufacturer Part No: 2N3055
- Manufacturer: STMicroelectronics
- Series: 2N3055
- Product Type: BJTs – Bipolar Transistors
- Transistor Polarity: NPN
- Configuration: Single
- Collector-Emitter Voltage VCEO Max: 60V
- Collector- Base Voltage VCBO: 100V
- Emitter- Base Voltage VEBO: 7 V
- Collector-Emitter Saturation Voltage: 1 V
- Maximum DC Collector Current: 15 A
- Pd – Power Dissipation: 115 W
- Gain Bandwidth Product fT: 3 MHz
- Minimum Operating Temperature: -65°C
- Maximum Operating Temperature: +200°C
- Continuous Collector Current: 15 A
- DC Collector/Base Gain hFE Min: 20
- DC Current Gain hFE Max: 70
- Mounting Style: Through Hole
- Package/Case: TO-3
Applications:
- Power switching circuits
- Amplifier circuits
- PWM applications
- Regulator circuits
- Switch mode power supply
- Signal Amplifiers
Datasheet: 2N3055 NPN Power Transistor – TO-3 Metal Package
Package Includes:
- 1 x 2N3055 NPN Power Transistor – TO-3 Metal Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product
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