25N120FL – 1200V 25A IGBT Transistor – TO-247 Package

25N120FL – 1200V 25A IGBT Transistor – TO-247 Package

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state
voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. Tags, NGTB25N120FLWG, NGTB25N120F IGBT, 25N120 IGBT.

Features:

• Low Saturation Voltage using Trench with Field Stop Technology
• Low Switching Loss Reduces System Power Dissipation
• 10 s Short Circuit Capability
• Low Gate Charge
• Soft, Fast Free Wheeling Diode
• These are Pb−Free Devices

Features/Specs:

• Manufacturer Part No: NGTB25N120FLWG
• Manufacturer: Onsemi
• Collector-Emitter voltage: 1200V
• Collector current: 25 ~ 50A
• Pulsed collector current: 200A
• Diode Forward Current: 25 ~ 50A
• Gate Emitter voltage: 20V
• Power Dissipation: 192 Watts
• Short Circuit Withstand Time: 10uS
• Package: TO−247

Application:

• AC drives
• DC drives and choppers
• Uninterruptible power supplies (UPS)
• switched-mode and resonant-mode power supplies
• Inductive Heaters, Inductive cookers

Datasheet: 25N120FL

Package Includes:

• 1 x 25N120FL – 1200V 25A IGBT Transistor – TO-247 Package

Note: Product Images are shown for illustrative purposes only and may differ from actual product.