20N60 – 650V 20.7A N-Channel Power Mosfet -TO-247 Package
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing minimum on-state resistance and superior switching performance. It also can withstand high-energy pulse in the avalanche and commutation mode. The UTC 20N60 is universally applied in motor control, UPS, DC choppers, and switch-mode and resonant-mode power supplies. Tags, GW20NC60VD, IKW20N60T, SPW20N60C3, K20T60
Features/Specs:
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage: 650V
- Continuous Drain Current: 20.7A
- Drain-Source Resistance: 190 mOhms
- Gate-Source Voltage: 20V
- Configuration: Single
- Operating Temperature Range: -55 ~ 150°C
- Power Dissipation: 208 Watt
- New revolutionary high-voltage technology
- Ultra-low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- High peak current capability
- Improved transconductance
- Package-TO-247
Datasheet: 20N60 MOSFET – 650V 20.7A N-Channel Power Mosfet
Package Includes:
- 1 x 20N60 – 650V 20.7A N-Channel Power Mosfet -TO-247 Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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