This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 20N60 is universally applied in motor control, UPS, DC choppers, and switch-mode and resonant-mode power supplies.
- 650V @TJ = 150 deg C
- Drain-Source Voltage: 600V
- Gate-Source Voltage: ±30
- Typ. RDS(on) = 0.15ohm
- Ultra-low gate charge (typ. Qg = 75nC)
- Low effective output capacitance (typ. Coss.eff = 165pF)
- 100% avalanche tested
Datasheet: 20N60 MOSFET
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