1N5819-40V/1A Schottky Barrier Diode
The Schottky diode, also known as the Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action. The IN5819 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation, and metal overlap contact.
Features/Specs:
- Repetitive Reverse Voltage: 40V
- Working Peak Reverse Voltage: 40V
- DC Blocking Voltage: 40V
- RMS Reverse Voltage: 28V
- Non−Repetitive Peak Reverse Voltage: 48V
- Average Rectified Output Current: 1A
- Non-Repetitive Peak Forward Surge Current: 25A
- Operating Temperature Range: −65 ~ +125°C
- Package: DO-41
Datasheet: 1N5819
Package Includes:
- 1 x 1N5819-40V/1A Schottky Barrier Diode
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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